Please use this identifier to cite or link to this item: http://bibdigital.epn.edu.ec/handle/15000/9569
Full metadata record
DC FieldValueLanguage
dc.contributor.authorDe Carvalho, Paulo Henrique P.es_ES
dc.contributor.authorBermúdez, Luis Alfonsoes_ES
dc.date.accessioned2007-05-16T16:36:23Zes_ES
dc.date.accessioned2010-09-07T17:42:29Zes_ES
dc.date.accessioned2011-03-10T17:34:01Z-
dc.date.available2007-05-16T16:36:23Zes_ES
dc.date.available2010-09-07T17:42:29Zes_ES
dc.date.available2011-03-10T17:34:01Z-
dc.date.issued1989-06es_ES
dc.identifier.urihttp://bibdigital.epn.edu.ec/handle/15000/9569es_ES
dc.language.isootheres_ES
dc.rightsopenAccess-
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/-
dc.subjectTRANSISTORES DE EFECTO DE CAMPOes_ES
dc.subject.otherFIELD EFFECT TRANSISTORSes_ES
dc.titleModelamento de transistores a efeito de campo para pequenos sinaises_ES
dc.typeArticlees_ES
Appears in Collections:1989 Anales de las X Jornadas en Ingeniería Eléctrica y Electrónica (1989 J - FIEE)

Files in This Item:
File Description SizeFormat 
1989AJIEE-34.pdf162,98 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.